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BUK7907-55ATE
TrenchPLUS standard level FET
Rev. 02 -- 16 July 2002
M3D745
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on state resistance, and TrenchPLUS diodes for Electrostatic Discharge (ESD) and temperature sensing. Product availability: BUK7907-55ATE in SOT263B.
2. Features
s s s s Typical on-state resistance 5.8 m Q101 compliant ESD protection Monolithically integrated temperature sensor for overload protection.
3. Applications
s Automotive and power switching: x 12 V and 24 V high power motor drives, e.g. Electrical Power Assisted Steering (EPAS) x Protected drive for lamps.
4. Pinning information
Table 1: Pin 1 2 3 4 5 mb Pinning - SOT263B simplified outline and symbol Description gate (g)
mb d a
Simplified outline
Symbol
anode (a) drain (d) cathode (k) source (s)
MBL317
g
mounting base; connected to drain (d)
s
k
1
5
MBL263
SOT263B
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 C Tmb = 25 C; VGS = 10 V Tmb = 25 C VGS = 10 V; ID = 50 A Tj = 25 C Tj = 175 C VF SF temperature sense diode forward voltage temperature coefficient temperature sense diode Tj = 25 C; IF = 250 A -55 C < Tj < 175 C; IF = 250 A 5.8 658 -1.54 7 14 668 -1.68 m m mV mV/K Typ Max 55 140 272 175 Unit V A W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
9397 750 09876
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
2 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) drain current (peak value) total power dissipation gate-source clamp current Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 continuous tp = 5 ms; = 0.01 Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IDR IDRM EDS(AL)S storage temperature junction temperature reverse drain current pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 68 A; VDS 55 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 C human body model; C = 100 pF; R = 1.5 k
[1] [2] [1] [2] [2]
Conditions
Min -55 -55 -
Max 55 55 20 140 75 75 560 272 10 50 100 +175 +175 140 75 560 460
Unit V V V A A A A W mA mA V C C A A A mJ
Source-drain diode
Avalanche ruggedness
Electrostatic Discharge Vesd electrostatic discharge voltage; pins 1,3,5 6 kV
[1] [2]
Current is limited by power dissipation chip rating. Continuous current is limited by package.
9397 750 09876
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
3 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
120 Pder (%) 80
03na19
160 ID (A) 120
03ni63
80
40 40
Capped at 75A due to package
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 200 Tmb (C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103 ID (A)
03nf55
Limit RDSon = VDS/ID
tp = 10 s
102
100 s Capped at 75 A due to package 1 ms DC
10
10 ms 100 ms
1 1 10 VDS (V) 102
Tmb = 25 C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09876
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
4 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
7. Thermal characteristics
Table 4: Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base Conditions vertical in still air Figure 4 Min Typ 60 Max 0.55 Unit K/W K/W
7.1 Transient thermal impedance
1
Z th(j-mb) (K/W)
03ni29
= 0.5
10-1
0.2
0.1 0.05
10-2
0.02
P
single shot
=
tp T
tp T
t
10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09876
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
5 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V Tj = 25 C Tj = 175 C V(BR)GSS IGSS gate-source breakdown voltage gate-source leakage current IG = 1 mA; -55C < Tj < 175 C VGS = 10 V; VDS = 0 V Tj = 25 C Tj = 175 C RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VF SF Vhys forward voltage, temperature sense diode temperature coefficient temperature sense diode temperature sense diode forward voltage hysteresis total gate charge gate-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time VDD = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 IF = 250 A IF = 250 A; -55 C < Tj < 175 C 125 A < IF < 250 A 648 -1.4 25 5.8 658 -1.54 32 7 14 668 -1.68 50 m m mV mV/K mV 22 1000 10 nA A 20 0.1 22 10 250 A A V 2 1 3 4 4.4 V V V 55 50 V V Min Typ Max Unit Static characteristics
Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VGS = 10 V; VDS = 25 V; ID = 25 A; Figure 14 116 19 50 4500 960 510 36 115 159 111 nC nC nC pF pF pF ns ns ns ns
9397 750 09876
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
6 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
Table 5: Characteristics...continued Tj = 25 C unless otherwise specified. Symbol Ld Parameter internal drain inductance Conditions from upper edge of drain mounting base to center of die from source lead to source bond pad IS = 25 A; VGS = 0 V; Figure 17 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V Min Typ 2.5 Max Unit nH
Ls
internal source inductance
-
7.5
-
nH
Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge 0.85 80 200 1.2 V ns nC
9397 750 09876
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
7 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
400 ID (A) 300 12
03ni65
8
10 8.5
03ni66
RDSon (m) 8 7
VGS (V) = 7.5
20
7
200 6.5
6
6
100 5.5
5
4 4.5
0 0 2 4 6 8 10 VDS (V)
4 5 10 15 VGS (V) 20
Tj = 25 C; tp = 300 s
Tj = 25 C; ID = 50 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values.
12 RDSon (m) 10
03ni67
2 VGS (V) = 5.5 a
03ne89
6
8
6.5
7 8 10
1.5
6
1
4
0.5
2
0 0 20 40 60 80 100 120 ID (A)
0 -60 0 60 120 Tj (C) 180
Tj = 25 C; tp = 300s
R DSon a = --------------------------R DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 09876
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
8 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2
03aa35
3
typ
10-3
min
typ
max
2
min
10-4
1
10-5
0 -60 0 60 120 Tj (C) 180
10-6 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
80 gfs (S) 60
03ni68
8000 C (pF) 6000 C iss
03ni69
40
4000
Crss
Coss
20
2000
0 0 20 40 60 80 I (A) 100 D
0 10-2 10-1 1 10 V 102 DS (V)
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09876
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
9 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
120 ID (A) 100
03ni70
10 VGS (V) 8
03nf25
80
VDS = 14 V 6 VDS = 44 V 4
60
40
175 C Tj = 25 C
2
20
0 0 2 4 VGS (V) 6
0 0 40 80 QG (nC) 120
VDS = 25 V
Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values.
700 VF (mV)
03ne84
1.70 -SF (mV/K) 1.65
03ne85
max
600
1.60
1.55
typ
500
1.50
1.45
min
400 0 50 100 150 Tj (C) 200
1.40 645 650 655 660 665 670 675 VF (mV)
IF = 250 A
VF at Tj = 25 C; IF = 250 A
Fig 15. Forward voltage of temperature sense diode as a function of junction temperature; typical values.
Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values.
9397 750 09876
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
10 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
100 IS (A) 80
03ni72
60
40
175 C
20
Tj = 25 C
0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V)
VGS = 0 V
Fig 17. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 09876
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
11 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT263B
E p1 p A A1 q D1
D
mounting base
L1 Q m L L2
1
e b
5
wM c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.85 0.70 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 1.7 L 15.0 13.5 L1
(1)
L2
(2)
m 0.8 0.6
p 3.8 3.6
p1 4.3 4.1
q 3.0 2.7
Q 2.6 2.2
w 0.4
2.4 1.6
0.5
Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B REFERENCES IEC JEDEC 5-lead TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-11
Fig 18. SOT263B.
9397 750 09876 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
12 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
10. Revision history
Table 6: 02 01 Revision history CPCN Description Product data; second version; supersedes initial version of 20020124 Product data; initial version
Rev Date 20020716 20020124
9397 750 09876
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
13 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
11. Data sheet status
Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Product data
Production
[1] [2]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
14. Trademarks
TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 09876
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 16 July 2002
14 of 15
Philips Semiconductors
BUK7907-55ATE
TrenchPLUS standard level FET
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Transient thermal impedance . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
(c) Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 July 2002 Document order number: 9397 750 09876

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